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Research Laboratory for Electronics (RLE)
RLE Progress Reports
RLE Progress Report, No. 137 (1994)
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
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Name
RLE_PR_137_01_01s_02.pdf
Size
2.23 MB
Format
Adobe PDF
Checksum
(MD5)
81017ad1a327a8bca7288d991e3d3f50
Author(s)
del Alamo, Jesús A.
•
Somerville, Mark H.
•
Adams, Tracy E.
•
Reiner, James W.
•
Weinberg, Michael J.
Date Issued
1994-01-01 to 1994-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137
Description
Contains an introduction, reports on two research projects and a list of publications.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
Persistent DSpace Link
http://hdl.handle.net/1721.1/57286
