GaN power electronics
Name
Palacios_GaN power electronics.pdf
Size
252.8 KB
Format
Adobe PDF
Checksum (MD5)
dc77af86ca240857b9a27f4e4ae7a912
Author(s)
Lu, Bin
Piedra, Daniel
Palacios, Tomas
Date Issued
December 2010
Journal
Proceedings of the 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Bin, Daniel Piedra, and Tomas Palacios. “GaN Power Electronics.” 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010. 105–110. © Copyright 2010 IEEE
Version
Final published version
Abstract
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems. We will describe three key technologies: Schottky drain contacts and substrate removal to increase the breakdown voltage, and a dual-gate device with superior enhancement-mode characteristics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ASDAM.2010.5666311
