Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
Name
AMMNS008.pdf
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759.84 KB
Format
Adobe PDF
Checksum (MD5)
64630d13a9fabc5cad7950d7a995f81d
Author(s)
Zang, Keyan
Wang, Lianshan
Chua, Soo-Jin
Thompson, Carl V.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized by optical microscopy, scanning electron microscopy, x-ray diffraction, and photoluminescence measurement. It was found that a thicker AlN buffer layer resulted in a higher crystalline quality of subsequently grown GaN films. The GaN with a thicker buffer layer has a narrower PL peak. Cracks were found in the GaN film which might be due to the formation of amorphous SiNx at the AlN and Si interface.
Subjects
metal-organic chemical vapour deposition
III-V nitrides
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