30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz
Name
Kim-2010-30-nm InAs PHEMTs Wi.pdf
Size
358.2 KB
Format
Adobe PDF
Checksum (MD5)
68f4a630e0fa98b6991e8d7cad544bd3
Author(s)
Kim, Dae-Hyun
del Alamo, Jesus A.
Date Issued
July 2010
Journal
Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Dae-Hyun Kim, and Jesús A del Alamo. “30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$.” IEEE Electron Device Letters 31.8 (2010). © Copyright 2010 IEEE
Version
Final published version
Abstract
We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f[subscript max] values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (L[subscript side]) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to L[subscript side] widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (Rc) to the InGaAs cap to 0.01 Ω·mm. A 30-nm InAs PHEMT with t[subscript ins] = 4 nm exhibits excellent gm,max of 1.9 S/mm, fT of 644 GHz, and f[subscript max] of 681 GHz at V[subscript DS] = 0.5 V simultaneously. To the knowledge of the authors, the obtained fT in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous fT and f[subscript max] higher than 640 GHz in any transistor technology.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/led.2010.2051133
