GaN-on-Si technology, a new approach for advanced devices in energy and communications
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Palacios_GaN-on-Si technology.pdf
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694 KB
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576b2c4eb532779b9e13f563b3281821
Author(s)
Chung, J. W.
Ryu, Kevin K.
Palacios, Tomas
Date Issued
November 2010
Journal
Proceedings of the European Solid-State Device Research Conference 2010 (ESSDERC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chung, J. W. et al. “GaN-on-Si Technology, a New Approach for Advanced Devices in Energy and Communications.” Proceedings of the European Solid-State Device Research Conference 2010 (ESSDERC). 52–56. © Copyright 2010 IEEE
Version
Final published version
Abstract
The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si substrates allow the on-chip heterogeneous integration of GaN and Si electronics. Second, the easy removal of the Si substrate through dry or wet etching gives access to the N-face of the GaN layer, and all the new device structures that this orientation enables. Finally, the use of Si substrates for the growth of GaN high voltage switches makes the cost of these devices competitive with Si devices, and the total or partial etch of Si brings a new degree of freedom to increase the breakdown and performance of GaN transistors.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ESSDERC.2010.5617745
