Mid-infrared integrated photonics on silicon: a perspective
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[Nanophotonics] Mid-infrared integrated photonics on silicon a perspective.pdf
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Author(s) • • • • • •
Lin, Hongtao
Luo, Zhengqian
Gu, Tian
Kimerling, Lionel C
Wada, Kazumi
Agarwal, Anuradha
Hu, Juejun
Date Issued
December 2017
Journal
Nanophotonics
Publisher
Walter de Gruyter GmbH
Citation
Lin, Hongtao, et al. “Mid-Infrared Integrated Photonics on Silicon: A Perspective.” Nanophotonics, vol. 7, no. 2, Dec. 2017. © 2017 Hongtao Lin and Juejun Hu et al.
Version
Final published version
Abstract
The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies. Keywords: mid-IR; integrated photonics; silicon photonics; spectrometer; optical sensor
MIT Department
Massachusetts Institute of Technology. Center for Materials Science and Engineering
Massachusetts Institute of Technology. Materials Processing Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1515/NANOPH-2017-0085