Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments Available
Name
243504_1_5.0173535.pdf
Description
Published version
Size
3.32 MB
Format
Adobe PDF
Checksum (MD5)
c0f67d2a050978584912ef5912a8c71f
Author(s)
Luo, Shisong
Fu, Kai
Xie, Qingyun
Yuan, Mengyang
Gao, Guanhui
Guo, Hua
Xu, Rui
Giles, Noah
Li, Tao
Mei, Zhaobo
Date Issued
December 12, 2023
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Shisong Luo, Kai Fu, Qingyun Xie, Mengyang Yuan, Guanhui Gao, Hua Guo, Rui Xu, Noah Giles, Tao Li, Zhaobo Mei, Mingfei Xu, Jingan Zhou, Ziyi He, Cheng Chang, Hanyu Zhu, Tomás Palacios, Yuji Zhao; Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments. Appl. Phys. Lett. 11 December 2023; 123 (24): 243504.
Version
Final published version
Abstract
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-regrown p-GaN after exposure to a simulated Venus environment (460 °C, ∼94 bar, containing CO2/N2/SO2 etc., atmosphere) for over 10 days, and compared them to the performance of GaN p–n diodes without the etch-then-regrow process. After the above-mentioned Venus test, temperature-dependent I–V and microscopy investigation were conducted to study the robustness of etch-then-regrow p-GaN and vertical GaN p–n diodes under harsh environments and operation up to 500 °C. p-electrode degradation is found to be the main issue of the device's performance. This is the highest temperature at which such characterization has been conducted for vertical GaN p–n diodes, therefore establishing a critical reference for the development of p-GaN regrown and vertical GaN-based electronics for extreme environments.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1063/5.0173535
