Exciton front propagation in photoexcited GaAs quantum wells
Name
Yang-2010-Exciton front propag.pdf
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338.85 KB
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Author(s)
Yang, Sen
Butov, L. V.
Simons, B. D.
Gossard, A. C.
Levitov, Leonid
Date Issued
March 2010
Journal
Physical Review B
Publisher
American Physical Society
Citation
Yang, Sen et al. “Exciton front propagation in photoexcited GaAs quantum wells.” Physical Review B 81.11 (2010): 115320. © 2010 The American Physical Society
Version
Final published version
Abstract
We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.81.115320
