Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes
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Kong_Current on.pdf
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1908263da08d727214e65b47f8081175
Author(s)
Feng, Y.
Lee, K.
Farhat, Hootan
Kong, Jing
Date Issued
November 2009
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Feng, Y., K. Lee, H. Farhat, and J. Kong. “Current On/off Ratio Enhancement of Field Effect Transistors with Bundled Carbon Nanotubes.” Journal of Applied Physics 106, no. 10 (2009): 104505. © 2009 American Institute of Physics
Version
Final published version
Abstract
This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semiconducting CNTs while burning off the metallic ones by electrical current. By further incorporating a repeated gate voltage sweeping step, devices with low I[subscript off] (less than 2 nA) and high I[subscript on]/I[subscript off], which is one to five orders of magnitude larger than before etching/cutting combination process, can be obtained.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3253737
