Electronic phases, band gaps, and band overlaps of bismuth antimony nanowires
Name
Tang-2014-Electronic phases band gaps.pdf
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2.01 MB
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Adobe PDF
Checksum (MD5)
1b05852761a73564945c986a484fc223
Author(s)
Tang, Shuang
Dresselhaus, Mildred
Date Issued
January 2014
Journal
Physical Review B
Publisher
American Physical Society
Citation
Tang, Shuang, and Mildred S. Dresselhaus. “Electronic Phases, Band Gaps, and Band Overlaps of Bismuth Antimony Nanowires.” Phys. Rev. B 89, no. 4 (January 2014). © 2014 American Physical Society
Version
Final published version
Abstract
We have developed an iterative one-dimensional model to study the narrow band gap and the associated nonparabolic dispersion relations for bismuth antimony nanowires. An analytical approximation has also been developed. Based on the general model we have developed, we have calculated and analyzed the electronic phase diagrams and the band-gap/band-overlap map for bismuth antimony nanowires, as a function of stoichiometry, growth orientation, and wire width.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.89.045424
