Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber
Name
oe-27-3-3542.pdf
Description
Published version
Size
11.22 MB
Format
Adobe PDF
Checksum (MD5)
e3ded4fcaeeae19a16d984ba21c9da18
Author(s)
Shtyrkova, Katia
Callahan, Patrick T.
Li, Nanxi
Magden, Emir Salih
Ruocco, Alfonso
Vermeulen, Diedrik Rene Georgette
Kaertner, Franz X
Watts, Michael
Ippen, Erich Peter
Date Issued
February 2019
Journal
Optics Express
Publisher
The Optical Society
Citation
Shtyrkova, Katia, et al. “Integrated CMOS-Compatible Q-Switched Mode-Locked Lasers at 1900nm with an on-Chip Artificial Saturable Absorber.” Optics Express 27, 3 (February 2019): 3542 © 2019 Optical Society of America
Version
Final published version
Abstract
We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al[subscript 2]O[subscript 3] glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Lincoln Laboratory
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1364/OE.27.003542
