Single-color centers implanted in diamond nanostructures
Name
Hausmann-2011-Single-color centers implanted in diamond nanostructures.pdf
Size
1.52 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Hausmann, Birgit J. M.
Babinec, Thomas M.
Choy, Jennifer T.
Hodges, Jonathan S.
Hong, Sungkun
Bulu, Irfan
Yacoby, Amir
Lukin, Mikhail D.
Date Issued
April 2011
Journal
New Journal of Physics
Publisher
Institute of Physics Publishing
Citation
Hausmann, Birgit J M et al. “Single-color Centers Implanted in Diamond Nanostructures.” New Journal of Physics 13.4 (2011): 045004. Web.
Version
Final published version
Abstract
The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1 μm) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Terms of Use
Creative Commons Attribution 3.0
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1088/1367-2630/13/4/045004
