Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors
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11664_2020_8114_ReferencePDF.pdf
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Author(s)
Su, P.
Pujari, R.
Boodhoo, V.
Aggarwal, S.
Bhattacharya, P.
Maksimov, O.
Wada, Kazumi
Merlo, S.
Bhandari, H. B.
Kimerling, Lionel C
Date Issued
April 2020
Journal
Journal of Electronic Materials
Publisher
Springer Science and Business Media LLC
Citation
Su, P. et al. "Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors." Journal of Electronic Materials 49, 8 (April 2020): 4577–4580 © 2020 The Minerals, Metals & Materials Society
Version
Author's final manuscript
Abstract
We demonstrate thin films of PbSe1−xSx and PbSe1−xTex lead chalcogenide ternary alloys as infrared detectors. The films were deposited on single crystal BaF2 substrates using physical vapor deposition. Detectivity in the wavelength range from 1 μm to 5 μm was measured at −40°C, and all films showed photoresponse signals more than an order of magnitude larger than their noise. The detectivity spectra were used to assess the tunability of the band gap from mixing the lead chalcogenide binaries. The PbSe1−xSx system showed tunability that followed Vegard’s law, while the PbSe1−xTex system showed tunability with a bowing parameter of −0.096 eV. Comparisons to measurements from the literature taken at room temperature suggest that the bowing parameter decreases with decreasing temperature, and the band gap temperature coefficient with respect to composition also shows bowing.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
MIT Materials Research Laboratory
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DOI of Published Version
https://doi.org/10.1007/s11664-020-08114-w
