Waterproof molecular monolayers stabilize 2D materials
Name
20844.full.pdf
Description
Published version
Size
1.59 MB
Format
Adobe PDF
Checksum (MD5)
ec0a770acb07db977c5f69825144d3a7
Author(s)
Su, Cong
Yin, Zongyou
Yan, QingBo
Wang, Zegao
Lin, Hongtao
Sun, Lei
Xu, Wenshuo
Yamada, Tetsuya
Ji, Xiang
Zettsu, Nobuyuki
Date Issued
October 2019
Journal
Proceedings of the National Academy of Sciences
Publisher
Proceedings of the National Academy of Sciences
Citation
Su, Cong et al. "Waterproof molecular monolayers stabilize 2D materials." Proceedings of the National Academy of Sciences 116, 42 (October 2019): 20844-20849 © 2019 National Academy of Sciences
Version
Final published version
Abstract
Two-dimensional van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines n-CmH2m+1NH2, with m = 4 through 11, are highly effective in protecting the optoelectronic properties of these materials, such as black phosphorus (BP) and transition-metal dichalcogenides (TMDs: WS2, 1T′-MoTe2, WTe2, WSe2, TaS2, and NbSe2). As a representative example, n-hexylamine (m = 6) can be applied in the form of thin molecular monolayers on BP flakes with less than 2-nm thickness and can prolong BP’s lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, H2 annealing, and organic solvents, but can be removed by certain organic acids.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1073/pnas.1909500116
