Monolithic III-V/Si Integration
Name
Fitzgerald_Monolithic III.pdf
Size
1.21 MB
Format
Adobe PDF
Checksum (MD5)
8abc0398294d77032a5cac766a4e0481
Date Issued
October 2008
Journal
9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Fitzgerald, E.A. et al. “Monolithic III-V/Si Integration.” IEEE, 2008. 1421–1424. © Copyright 2008 IEEE
Version
Final published version
Abstract
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al[subscript 2]O[subscript 3]/GaAs process for III-V MOS.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ICSICT.2008.4734819
