30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications
Name
Kim-2009-30 nm In0.7Ga0.3as inverted-type HEMTs with reduced gate leakage current for logic applications.pdf
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590 KB
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Checksum (MD5)
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Author(s)
Kim, Tae-Woo
Kim, Dae-Hyun
del Alamo, Jesus A.
Alternative Title
30 nm In0.7Ga0.3As inverted-type HEMTs with reduced gate leakage current for logic applications
Date Issued
March 2010
Journal
2009 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers
Citation
Tae-Woo Kim, Dae-Hyun Kim, and J.A. del Alamo. “30 nm In0.7Ga0.3As Inverted-Type HEMTs with reduced gate leakage current for logic applications.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. ©2010 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/mu m, S = 83 mV/dec, DIBL = 118 mV/V, ION/IOFF = 4 x 10[superscript 4], all at 0.5 V. More significantly, the removal of dopants from the barrier suppresses forward gate leakage current by over 100X when compared with equivalent normal HEMTs. The Lg = 30 nm devices also feature record high-frequency characteristics for an inverted-type HEMT design with fT = 500 GHz and fmax = 550 GHz.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2009.5424317
