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Optomechanical control of stacking patterns of h-BN bilayer

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Xu et al. - 2019 - Optomechanical control of stacking patterns of h-B.pdf

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sword-2020-07-16T16:32:24.original.xml (130 B)
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Author(s)
Xu, Haowei
•
Zhou, Jian
•
Li, Yifei
•
Jaramillo, Rafael
•
Li, Ju
Date Issued
August 2019
Journal
Nano Research
Publisher
Springer Science and Business Media LLC
Citation
Xu, Haowei et al. "Optomechanical control of stacking patterns of h-BN bilayer." Nano Research 12, 10 (August 2019): 2634–2639 © 2019 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
Version
Author's final manuscript
Abstract
Few-layer two-dimensional (2D) materials usually have different (meta)-stable stacking patterns, which have distinct electronic and optical properties. Inspired by optical tweezers, we show that a laser with selected frequency can modify the generalized stacking-fault energy landscape of bilayer hexagonal boron nitride (BBN), by coupling to the slip-dependent dielectric response. Consequently, BBN can be reversibly and barrier-freely switched between its stacking patterns in a controllable way. We simulate the dynamics of the stacking transition with a simplified equation of motion and demonstrate that it happens at picosecond timescale. When one layer of BBN has a nearly-free surface boundary condition, BBN can be locked in its metastable stacking modes for a long time. Such a fast, reversible and non-volatile transition makes BBN a potential media for data storage and optical phase mask. [Figure not available: see fulltext.].
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
http://creativecommons.org/licenses/by-nc-sa/4.0/
Persistent DSpace Link
https://hdl.handle.net/1721.1/126259
DOI of Published Version
https://doi.org/10.1007/s12274-019-2500-y
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