High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Name
Lu-2010-High Breakdown (_ 15.pdf
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Author(s)
Lu, Bin
Palacios, Tomas
Alternative Title
High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Date Issued
July 2010
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Bin, and Tomás Palacios. “High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology.” IEEE Electron Device Letters 31.9 (2010): 951–953. © Copyright 2010 IEEE
Version
Final published version
Abstract
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/led.2010.2052587
