Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS 2 Heterostructures
Name
2108.10995.pdf
Description
Accepted version
Size
1.21 MB
Format
Adobe PDF
Checksum (MD5)
69f984b2657f2bc446369305269512ab
Author(s)
Zhang, Kunyan
Guo, Yunfan
Larson, Daniel T
Zhu, Ziyan
Fang, Shiang
Kaxiras, Efthimios
Kong, Jing
Huang, Shengxi
Date Issued
2021
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Zhang, Kunyan, Guo, Yunfan, Larson, Daniel T, Zhu, Ziyan, Fang, Shiang et al. 2021. "Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS 2 Heterostructures." ACS Nano, 15 (9).
Version
Author's final manuscript
Abstract
The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of photoluminescence (PL) quenching of MoS2 A exciton, suggesting enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/ACSNANO.1C03779
