A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor
Name
EDL-2017-11-1834-Revised Manuscript_Clean Version.pdf
Size
1.27 MB
Format
Adobe PDF
Checksum (MD5)
79e03c3792044f33a394749639a6b0a5
Author(s)
Yin, Zongyou
Tordjman, Moshe
Vardi, Alon
Kalish, Rafi
del Alamo, Jesus A
Date Issued
February 2018
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yin, Zongyou et al. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, 4 (February 2018): 540 - 543 © 2018 IEEE
Version
Author's final manuscript
Abstract
A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/led.2018.2808463
