Logarithmic singularities and quantum oscillations in magnetically doped topological insulators
Name
PhysRevB.97.085151.pdf
Size
2.66 MB
Format
Adobe PDF
Checksum (MD5)
746efa32dce51c1c380e545a26d0c111
Author(s)
Nandi, D.
Shain, K.
Lee, G. H.
Huang, K.-F.
Chang, Cui-Zu
Ou, Yunbo
Lee, S. P.
Ward, J.
Moodera, J. S.
Kim, P.
Date Issued
February 2018
Journal
Physical Review B
Publisher
American Physical Society
Citation
Nandi, D. et al. "Logarithmic singularities and quantum oscillations in magnetically doped topological insulators." Physical Review B 97, 8 (February 2018): 085151 © 2018 American Physical Society
Version
Final published version
Abstract
We report magnetotransport measurements on magnetically doped (Bi,Sb)[subscript 2]Te[subscript 3] films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Terms of Use
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Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.97.085151
