Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics
Name
18969291-MIT.pdf
Description
Full printable version
Size
8.8 MB
Format
Adobe PDF
Checksum (MD5)
5ba12b8187354b9734c6582ecd85fc54
Author(s)
Jayaraman, Rajsekhar
Advisor(s)
Charles G. Sodini.
Date Issued
1988
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.
Bibliography: leaves 164-178.
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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