Modeling poly-silicon gate depletion in submicron MOS devices
Name
43521403-MIT.pdf
Description
Full printable version
Size
9.34 MB
Format
Adobe PDF
Checksum (MD5)
fae1e4d81b0c6a8bd73ff71ecea95351
Author(s)
Li, James Chingwei, 1975-
Advisor(s)
Stephen D. Senturia.
Alternative Title
Modeling poly-silicon gate depletion in submicron metal oxide semiconductor devices
Date Issued
1999
Publisher
Massachusetts Institute of Technology
Description
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
Includes bibliographical references (p. 119-121).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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