Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon
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Buonassisi_Methodology for.pdf
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Author(s)
Krich, Jacob J.
Akey, Austin J.
Recht, D.
Aziz, Michael J.
Sullivan, Joseph T.
Simmons, Christie
Buonassisi, Tonio
Date Issued
September 2013
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Sullivan, J. T., C. B. Simmons, J. J. Krich, A. J. Akey, D. Recht, M. J. Aziz, and T. Buonassisi. “Methodology for Vetting Heavily Doped Semiconductors for Intermediate Band Photovoltaics: A Case Study in Sulfur-Hyperdoped Silicon.” Journal of Applied Physics 114, no. 10 (2013): 103701. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a “performance figure of merit” and to determine both the position and bandwidth of the impurity band. We evaluate a candidate impurity-band material, silicon hyperdoped with sulfur; we find that the figure of merit is more than one order of magnitude too low for photovoltaic devices that exceed the thermodynamic efficiency limit for single band gap materials.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4820454
