Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform
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oe-26-13-16200.pdf
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Published version
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5.03 MB
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Checksum (MD5)
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Author(s) • • • • • • • • •
Li, Nanxi
Vermeulen, Diedrik Rene Georgette
Su, Zhan
Magden, Emir Salih
Xin, Ming
Singh, Neetesh Kumar
Ruocco, Alfonso
Notaros, Jelena
Poulton, Christopher Vincent
Timurdogan, Erman
Date Issued
June 2018
Journal
Optics Express
Publisher
The Optical Society
Citation
Li, Nanxi et al. "Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform." Optics Express 26, 13 (June 2018): 16200-16211 © 2018 Optical Society of America
Version
Final published version
Abstract
A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped Al[subscript 2]O[subscript 3] sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two Si[subscript 3]N[subscript 4] microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1364/oe.26.016200