Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls
Name
Currivan-Incorvia-2016-Logic Circuit.pdf
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1.29 MB
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Checksum (MD5)
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Author(s)
Dutta, S.
Evarts, E. R.
Zhang, J.
Currivan-Incorvia, Jean A.
Siddiqui, Saima Afroz
Bono, David C.
Ross, Caroline A.
Baldo, Marc A.
Date Issued
January 2016
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Currivan-Incorvia, J. A., S. Siddiqui, S. Dutta, E. R. Evarts, J. Zhang, D. Bono, C. A. Ross, and M. A. Baldo. “Logic Circuit Prototypes for Three-Terminal Magnetic Tunnel Junctions with Mobile Domain Walls.” Nat Comms 7 (January 12, 2016): 10275.
Version
Final published version
Abstract
Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.1038/ncomms10275
