Statistical Modeling with the Virtual Source MOSFET Model
Name
LiYu_DATE_statistical VS modeling.pdf
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2.46 MB
Format
Adobe PDF
Checksum (MD5)
001e143d878cb59faad68c801fc9f036
Author(s)
Yu, Li
Wei, Lan
Elfadel, Ibrahim M.
Antoniadis, Dimitri A.
Boning, Duane S.
Date Issued
March 2013
Journal
Proceedings of the Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yu, Li, Lan Wei, Dimitri Antoniadis, Ibrahim Elfadel, and Duane Boning. “Statistical Modeling with the Virtual Source MOSFET Model.” Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013 (2013).
Version
Original manuscript
Abstract
A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time. The characterization uses a statistical extraction technique based on the backward propagation of variance (BPV) with variability parameters derived directly from the nominal VS model. The resulting statistical VS model is extensively validated using Monte Carlo simulations, and the statistical distributions of several figures of merit for logic and memory cells are compared with those of a BSIM model from a 40-nm CMOS industrial design kit. The comparisons show almost identical distributions with distinct run time advantages for the statistical VS model. Additional simulations show that the statistical VS model accurately captures non-Gaussian features that are important for low-power designs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.7873/DATE.2013.296
