Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate
Name
AMMNS013.pdf
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Checksum (MD5)
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Author(s)
Yu, Hongpeng
Pey, Kin Leong
Choi, Wee Kiong
Fitzgerald, Eugene A.
Antoniadis, Dimitri A.
Alternative Title
Poly-Si1-xGex Film Growth for Ni Germanosilicided Metal Gate
Date Issued
January 2005
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁â‚‹xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.
Subjects
complementary metal oxide semiconductor
nickel
poly-SiGe
poly-silicon germanium
silica
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