Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
Name
PhysRevB.98.081203.pdf
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2.93 MB
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Checksum (MD5)
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Author(s)
Liu, Te Huan
Song, Bai
Meroueh, Laureen
Ding, Zhiwei
Song, Qichen
Zhou, Jiawei
Li, Mingda
Chen, Gang
Date Issued
August 2018
Journal
Physical Review B
Publisher
American Physical Society
Citation
Liu, Te-Huan, et al. “Simultaneously High Electron and Hole Mobilities in Cubic Boron-V Compounds: BP, BAs, and BSb.” Physical Review B, vol. 98, no. 8, Aug. 2018. © 2018 American Physical Society
Version
Final published version
Abstract
Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transition mediated by large-wave-vector optical phonons, both of which significantly facilitate charge transport. We also discover that BAs simultaneously has a high hole mobility (2110cm[superscript 2]/Vs) and electron mobility (1400cm[superscript 2]/Vs) at room temperature, which is rare in semiconductors. Our findings present insight into searching high mobility polar semiconductors, and point to BAs as a promising material for electronic and photovoltaic devices in addition to its predicted high thermal conductivity.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.98.081203
