GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications
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Buonassisi_GaN Cu2o heterojunctions.pdf
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Author(s)
Hering, K.P.
Kramm, B.
Meyer, B.K.
Brandt, Riley E.
Buonassisi, Tonio
Date Issued
January 2014
Journal
Energy Procedia
Publisher
Elsevier
Citation
Hering, K.P., R.E. Brandt, B. Kramm, T. Buonassisi, and B.K. Meyer. “GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications.” Energy Procedia 44 (2014): 32–36.
Version
Final published version
Abstract
Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a thin layer of GaN:Si grown on a sapphire substrate by metal organic vapor deposition. The deposition procedure was followed up by photolithographic structuring and thermal evaporation of metal contacts. For device characterization, J-V characteristics and external quantum efficiency were measured, pointing to a possible energy barrier in the conduction band. To gain further insight X-ray photoelectron spectroscopy was applied.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
Terms of Use
Creative Commons Attribution-NonCommercial-No Derivative Works 3.0 Unported
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DOI of Published Version
https://doi.org/10.1016/j.egypro.2013.12.006
