SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
Name
AMMNS028.pdf
Size
422.68 KB
Format
Adobe PDF
Checksum (MD5)
7ddef6620dfcb43861ffd5aba540b91a
Author(s)
Cheng, Zhiyuan
Jung, Jongwan
Lee, Minjoo L.
Nayfeh, Hasan
Pitera, Arthur J.
Hoyt, Judy L.
Fitzgerald, Eugene A.
Antoniadis, Dimitri A.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities.
Subjects
strained-Si
SiGe
SiGe-on-Insulator
SGOI
strained-Si on SGOI
SSOI
SOI
dual-channel
surface channel
MOSFET
mobility
bonding
etch-back
Persistent DSpace Link
