Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth
Name
Srisung-2010-Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth.pdf
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2.78 MB
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Adobe PDF
Checksum (MD5)
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Author(s)
Srisungsitthisunti, Pornsak
Tansarawiput, Chookiat
Zhang, Huaichen
Qi, Minghao
Xu, Xianfan
Moon, Euclid Eberle
Date Issued
August 2010
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Pornsak Srisungsitthisunti, Euclid E. Moon, Chookiat Tansarawiput, Huaichen Zhang, Minghao Qi and Xianfan Xu, "Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth", Proc. SPIE 7767, 776707 (2010); doi:10.1117/12.860581 © 2010 COPYRIGHT SPIE
Version
Final published version
Abstract
We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1117/12.860581
