Fabrication and Characterization of Through-Substrate Interconnects
Name
Wu-2010-Fabrication and Characterization of Through-Substrate Interconnects.pdf
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945.23 KB
Format
Adobe PDF
Checksum (MD5)
2dc4a49b797d6cd1c4f1f58f0e58c2fd
Author(s)
del Alamo, Jesus A.
Wu, Joyce H.
Date Issued
May 2010
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF.
Subjects
Ground inductance
Si RF technology
substrate crosstalk
substrate via
through-substrate via
through-wafer interconnect
through-wafer via
via inductance
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ted.2010.2045671
