Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
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Fitzgerald_Growth microstructure.pdf
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2.25 MB
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Author(s)
Beaton, Daniel A.
Christian, T.
Alberi, Kirstin
Mascarenhas, A.
Bulsara, Mayank
Mukherjee, Kunal
Jones, Eric James
Fitzgerald, Eugene A.
Date Issued
May 2013
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Mukherjee, K., D. A. Beaton, T. Christian, E. J. Jones, K. Alberi, A. Mascarenhas, M. T. Bulsara, and E. A. Fitzgerald. “Growth, Microstructure, and Luminescent Properties of Direct-Bandgap InAlP on Relaxed InGaAs on GaAs Substrates.” Journal of Applied Physics 113, no. 18 (2013): 183518. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-green and amber optoelectronics with applications in solid-state lighting, display devices, and multi-junction solar cells. We report on the growth of high-quality direct-bandgap InAlP on relaxed InGaAs graded buffers with low threading dislocation densities. Structural characterization reveals phase-separated microstructures in these films which have an impact on the luminescence spectrum. While similar to InGaP in many ways, the greater tendency for phase separation in InAlP leads to the simultaneous occurrence of compositional inhomogeneity and CuPt-B ordering. Mechanisms connecting these two structural parameters are presented as well as results on the effect of silicon and zinc dopants on homogenizing the microstructure. Spontaneous formation of tilted planes of phase-separated material, with alternating degrees of ordering, is observed when InAlP is grown on vicinal substrates. The photoluminescence peak-widths of these films are actually narrower than those grown on exact (001) substrates. We find that, despite phase-separation, ordered direct-bandgap InAlP is a suitable material for optoelectronics.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4804264
