Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces
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Author(s)
Yang, Chuanxi
Sun, Leizhi
Kim, Sang Bok
Feng, Jun
Gordon, Roy G.
Brandt, Riley E
Zhao, Xizhu
Buonassisi, Anthony
Date Issued
July 2017
Journal
Journal of Applied Physics
Publisher
AIP Publishing
Citation
Yang, Chuanxi, Leizhi Sun, Riley E. Brandt, Sang Bok Kim, Xizhu Zhao, Jun Feng, Tonio Buonassisi, and Roy G. Gordon. “Measurement of Contact Resistivity at Metal-Tin Sulfide (SnS) Interfaces.” Journal of Applied Physics 122, no. 4 (July 28, 2017): 045303.
Version
Final published version
Abstract
We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au < Mo < Ti. The contact resistances for Au and Mo are low enough so that they do not significantly decrease the efficiency of solar cells based on SnS as an absorber. On the other hand, the contact resistance of Ti to SnS is sufficiently high that it would decrease the efficiency of a SnS solar cell using Ti as a back contact metal. We further estimate the barrier heights of the junctions between these metals and tin sulfide using temperature-dependent TLM measurements. The barrier heights of these three metals lie in a narrow range of 0.23-0.26 eV, despite their large differences in work function. This Fermi level pinning effect is consistent with the large dielectric constant of SnS, and comparable to Fermi-level pinning on Si. The contact resistivity between annealed SnS films and Mo substrates under light illumination is as low as 0.1 Ω cm2.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4992086
