Advances in the CVD growth of graphene for electronics applications
Name
795237083-MIT.pdf
Description
Full printable version
Size
16.17 MB
Format
Adobe PDF
Checksum (MD5)
8a134ce9fa23209ccbd0955f128141f3
Author(s)
Hofmann, Mario
Advisor(s)
Jing Kong, Mildred S. Dresselhaus and Michael S. Strano.
Alternative Title
Advances in the chemical vapor deposition growth of graphene for electronics applications
Date Issued
2012
Publisher
Massachusetts Institute of Technology
Abstract
Graphene, a monoatomic sheet of graphite, has recently received significant attention because of its potential impact in a wide variety of research areas. This thesis presents progress on improving the quality of graphene for electronics applications. An analysis tool was developed that provides a fast and scalable way to reveal the defectiveness of CVD grown graphene. This approach relies on a graphene passivated etching process that was found to be sensitive to structural defects in the graphene film. A strong correlation between the density of structural defects and the electron mobility emphasizes their importance for high quality graphene devices. The dimensions of graphene defects were found to be nanometer-sized and it was demonstrated that the defects exhibit novel fluid dynamical properties. The graphene synthesis process was investigated using the described analysis tool and the kinetics of graphene formation was revealed. The influence of promoters on the growth process was described and analyzed. The new insight into the growth process was applied to a novel approach to directly synthesize graphene patterns by catalyst passivation. Several advantages of this method over existing fabrication schemes were described and a number of applications based on these improvements were shown.
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 97-103).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
Persistent DSpace Link