Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers
Name
714374473-MIT.pdf
Description
Full printable version
Size
11.13 MB
Format
Adobe PDF
Checksum (MD5)
3329beae0f1a0de82f8f327533a1cf98
Author(s)
Chi, Pei-Chun
Advisor(s)
Leslie A. Kolodziejski and Silvija Gradečak.
Date Issued
2010
Publisher
Massachusetts Institute of Technology
Abstract
A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes the advantage of sophisticated material study from telecommunication technology. This thesis presents the realization of a 1.97 pm emission ridge waveguide laser in design, fabrication, and characterization phases. Ino.85 Gao.15As/Alo.1Ino.4 8Gao.42As strained multiple quantum wells structures have being built on InP substrates. Structural, optical, and electrical properties of the material have being tested and summarized.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 89-91).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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