Photoluminescence quenching of tris-(8-hydroxyquinoline) aluminum thin films at interfaces with metal oxide films of different conductivities
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Mei-2009-Photoluminescence qu.pdf
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Author(s)
Mei, Jun
Bradley, Michael Scott
Bulovic, Vladimir
Date Issued
June 2009
Journal
Physical Review B
Publisher
American Physical Society
Citation
Mei, Jun , M. Scott Bradley, and Vladimir Bulovic. “Photoluminescence quenching of tris-(8-hydroxyquinoline) aluminum thin films at interfaces with metal oxide films of different conductivities.” Physical Review B 79.23 (2009): 235205. (C) 2010 The American Physical Society.
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Final published version
Abstract
We report a comprehensive study of photoluminescence (PL) quenching of tris-(8-hydroxyquinoline) aluminum (Alq[subscript ]3) at interfaces with thin films of tin oxide (SnO[subscript 2]) using both steady-state and time-resolved measurements. Quenching of excitons generated in the Alq3 layer increased with increased conductivity of the SnO[subscript 2] films, which we relate with the presence of nonradiative energy transfer from excitons in Alq[subscript 3] to transitions in SnO[subscript 2]. In addition, due to the semitransparency of SnO[subscript 2], the effects of optical interference on the steady-state PL quenching of Alq[subscript 3] are determined. We demonstrate that without accounting for the interference effects in the excitation, the extracted exciton diffusion length (L[subscript d]) in Alq3 is in the range of 10–20 nm. However, when using a numerical model to account for the optical interference effects, we find that L[subscript d] is in the range of 5–9 nm, which agrees with L[subscript d] extracted from time-resolved measurements (4–6 nm). We conclude that time-resolved measurements are least affected by optical interference, yielding the most accurate measurement of L[subscript d].
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
http://dx.doi.org/10.1103/PhysRevB.79.235205
