Reduced recombination via tunable surface fields in perovskite thin films
Author(s)
deQuilettes, Dane W
Yoo, Jason J
Brenes, Roberto
Kosasih, Felix Utama
Laitz, Madeleine
Dou, Benjia Dak
Graham, Daniel J
Ho, Kevin
Shi, Yangwei
Shin, Seong Sik
Date Issued
February 28, 2024
Journal
Nature Energy
Publisher
Springer Science and Business Media LLC
Citation
deQuilettes, D.W., Yoo, J.J., Brenes, R. et al. Reduced recombination via tunable surface fields in perovskite thin films. Nat Energy 9, 457–466 (2024).
Version
Author's final manuscript
Abstract
The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering is an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-two-dimensional (2D) heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) >25%, yet a fundamental understanding to how these treatments function is still generally lacking. Here we use a unique combination of depth-sensitive nanoscale characterization techniques to uncover a tunable passivation strategy and mechanism found in perovskite PV devices that were the first to reach the >25% PCE milestone. Namely, treatment with hexylammonium bromide leads to the simultaneous formation of an iodide-rich 2D layer along with a Br halide gradient that extends from defective surfaces and grain boundaries into the bulk three-dimensional (3D) layer. This interface can be optimized to extend the charge carrier lifetime to record values >30 μs and to reduce interfacial recombination velocities to values as low as <7 cm s−1.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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DOI of Published Version
10.1038/s41560-024-01470-5
