Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
Name
AMMNS014.pdf
Size
11.59 KB
Format
Adobe PDF
Checksum (MD5)
a9f37fc231b4bb7aee8225e47ee34581
Author(s)
Leong, Hoi Liong
Gan, C.L.
Pey, Kin Leong
Tsang, Chi-fo
Thompson, Carl V.
Hongyu, Li
Date Issued
January 2005
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C.
Subjects
three dimensional integrated circuits
bonded copper interconnects
bonding
fabrication
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