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2D-material-enabled multifunctional mid-IR optoelectronics
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112841U.pdf
Description
Published version
Size
977.93 KB
Format
Adobe PDF
Checksum (MD5)
ff1515fc68cd087826fbd196d949a237
Author(s)
Deckoff-Jones, Skylar
Wang, Yixiu
Lin, Hongtao
Wu, Wenzhuo
Hu, Juejun
Date Issued
February 26, 2020
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Publisher
SPIE
Citation
Deckoff-Jones, Skylar, Wang, Yixiu, Lin, Hongtao, Wu, Wenzhuo and Hu, Juejun. 2020. "2D-material-enabled multifunctional mid-IR optoelectronics." Proceedings of SPIE - The International Society for Optical Engineering, 11284.
Version
Final published version
Abstract
© 2020 SPIE. New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuß the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glaß (ChG) photonic platform.
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
10.1117/12.2543619
