Structural changes in HfSe2 and ZrSe2 thin films with various oxidation methods
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D3TC04698B.pdf
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Checksum (MD5)
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Author(s)
Foucher, Alexandre C.
Mortelmans, Wouter
Bing, Wu
Sofer, Zdeněk
Jaramillo, Rafael
Ross, Frances M.
Date Issued
June 13, 2024
Journal
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry
Citation
J. Mater. Chem. C, 2024,12, 9677-9684
Version
Final published version
Abstract
HfSe2 and ZrSe2 transition metal dichalcogenide (TMD) films are of interest for their potential applications in field-effect transistors. To implement the use of these materials in devices, the formation of an oxide/TMD interface with well-defined dielectric/semiconductor properties is essential. The method by which the oxide is created, as well as any structural changes in the TMD under the conditions used for oxide formation, will affect the performance of both the dielectric and the semiconductor. In this work, we describe the structure of the oxide and the morphological changes occurring in HfSe2 and ZrSe2 under several oxidation conditions. Using in situ transmission electron microscopy, we show that room temperature oxidation in air causes segregation of Se and uneven surface oxidation. Exposure to O2 at high temperatures readily forms a crystalline oxide layer, although defects and cavities are also detectable. Finally, plasma oxidation forms a smoother and more uniform oxide layer than that formed by thermal oxidation. These results can guide the rational design of oxide/TMD interfaces for field-effect transistors and other electronic devices that incorporate HfSe2 and ZrSe2.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.1039/D3TC04698B
