Characterization and Modeling of Chemical-Mechanical Polishing for Polysilicon Microstructures
Name
IMST005.pdf
Size
242.1 KB
Format
Adobe PDF
Checksum (MD5)
561885cbcb2c510b078d160b8420b7ba
Author(s)
Tang, Brian D.
Boning, Duane S.
Date Issued
January 2004
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Abstract
Long the dominant method of wafer planarization in the integrated circuit (IC) industry, chemical-mechanical polishing is starting to play an important role in microelectromechnical systems (MEMS). We present an experiment to characterize a polysilicon CMP process with the specific goal of examining MEMS sized test structures. We utilize previously discussed models and examine whether the same assumptions from IC CMP can be made for MEMS CMP. We find that CMP at the MEMS scale is not just pattern density dependent, but also partly dependent on feature size. Also, we find that new layout designs relevant to MEMS can negatively impact how well existing CMP models simulate polishing, motivating the need for further model development.
Subjects
chemical-mechanical polishing
polysilicon
MEMS
CMP
planarization
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