Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions
Name
paper hisaka.pdf
Size
318.3 KB
Format
Adobe PDF
Checksum (MD5)
ba6b016a8761d5c8da8e234ebfb7f9bb
Author(s)
Hisaka, Takayuki
Sasaki, Hajime
Nogami, Yoichi
Hosogi, Kenji
Yoshida, Naohito
Villanueva, Anita A.
del Alamo, Jesus A.
Hasegawa, Shigehiko
Asahi, Hajime
Date Issued
August 2009
Journal
Microelectronics Reliability
Publisher
Elsevier
Citation
Hisaka, Takayuki et al. “Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions.” Microelectronics Reliability 49.12 (2009): 1515-1519.
Version
Author's final manuscript
Abstract
We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity with bias consists of a decrease in maximum drain current (Imax) caused by a corrosion reaction at the semiconductor surface at the drain side. The decrease in Imax is markedly accelerated by the external gate-drain bias (Vgd). This originates from a reduction in the actual activation energy (Ea0) by Vgd. The degradation depends on the surface treatment prior to deposition of the SiNx passivation film. The reduction of As-oxide at the SiNx/semiconductor interface suppresses the corrosion reaction.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1016/j.microrel.2009.07.046
