Delay Analysis of Graphene Field-Effect Transistors
Name
Kong_Delay analysis.pdf
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543.94 KB
Format
Adobe PDF
Checksum (MD5)
a1eaf4bbcdc99d2e7546b0d4a1d939b5
Author(s)
Wang, Han
Hsu, Allen Long
Lee, Dong Seup
Kim, Ki Kang
Kong, Jing
Palacios, Tomas
Date Issued
February 2012
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “Delay Analysis of Graphene Field-Effect Transistors.” IEEE Electron Device Letters 33.3 (2012): 324–326.
Version
Author's final manuscript
Abstract
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1109/led.2011.2180886
