Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
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AMMNS007.pdf
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Author(s)
Quang, Hong Le
Chua, Soo-Jin
Loh, Kian Ping
Chen, Zhen
Thompson, Carl V.
Fitzgerald, Eugene A.
Date Issued
January 2005
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Uniformly distributed ZnO nanorods with
diameter 80-120 nm and 1-2µm long have been
successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow
along the c axis of the crystal plane. The room
temperature photoluminescence measurements have
shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO
nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to
150°C, the morphology of the ZnO nanorods changed from sharp tip with high aspect ratio to flat tip with smaller aspect ratio. These kinds of structure are useful in laser and field emission application.
Subjects
zinc oxide nanorods
gallium nitride
aqueous solution methods
ZnO nanorod morphology
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