Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy
Name
roberts-et-al-2023-nucleation-and-growth-of-gaas-on-a-carbon-release-layer-by-halide-vapor-phase-epitaxy.pdf
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6.94 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Roberts, Dennice M.
Kim, Hyunseok
McClure, Elisabeth L.
Lu, Kuangye
Mangum, John S.
Braun, Anna K.
Ptak, Aaron J.
Schulte, Kevin L.
Kim, Jeehwan
Simon, John
Date Issued
November 15, 2023
Journal
ACS Omega
Publisher
American Chemical Society
Citation
Dennice M. Roberts, Hyunseok Kim, Elisabeth L. McClure, Kuangye Lu, John S. Mangum, Anna K. Braun, Aaron J. Ptak, Kevin L. Schulte, Jeehwan Kim, and John Simon. ACS Omega 2023 8 (47), 45088-45095.
Version
Final published version
Abstract
We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.
Subjects
General Chemical Engineering
General Chemistry
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.1021/acsomega.3c07162
