Novel CMOS-Compatible Optical Platform
Name
AMMNS021.pdf
Size
865.47 KB
Format
Adobe PDF
Checksum (MD5)
cc10bdaf83c457698b2672a4a21c40ec
Author(s)
Pitera, Arthur J.
Groenert, M. E.
Yang, V. K.
Lee, Minjoo L.
Leitz, Christopher W.
Taraschi, G.
Cheng, Zhiyuan
Fitzgerald, Eugene A.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from Ge/GeSi/Si virtual substrates to bulk Si utilizing wafer bonding and an epitaxial Si CMP layer to facilitate virtual substrate planarization. A unique CMP-less method for removal of Ge exfoliation damage induced by the SmartCutâ„¢ process is also presented.
Subjects
chemo-mechanical planarization
GaAs/AlGaAs lasers
GeSi virtual substrates
optical circuit
wafer bonding
Persistent DSpace Link
