Synthesis of large-area multilayer hexagonal boron nitride for high material performance
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Kong_Synthesis of.pdf
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Author(s)
Kim, Soo Min
Hsu, Allen
Park, Min Ho
Chae, Sang Hoon
Yun, Seok Joon
Lee, Joo Song
Cho, Dae-Hyun
Fang, Wenjing
Lee, Changgu
Dresselhaus, Mildred
Date Issued
October 2015
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Kim, Soo Min, Allen Hsu, Min Ho Park, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae-Hyun Cho, et al. “Synthesis of Large-Area Multilayer Hexagonal Boron Nitride for High Material Performance.” Nat Comms 6 (October 28, 2015): 8662. © 2015 Macmillan Publishers Limited
Version
Final published version
Abstract
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/ncomms9662
