Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
Name
5.0019863.pdf
Description
Published version
Size
2.88 MB
Format
Adobe PDF
Checksum (MD5)
baabaafe9b834a21e5d244fbd19b2cb5
Author(s)
Hauwiller, Matthew R
Stowe, David
Eldred, Timothy B
Mita, Seiji
Collazo, Ramon
Sitar, Zlatko
LeBeau, James
Date Issued
2020
Journal
APL Materials
Publisher
AIP Publishing
Citation
Hauwiller, Matthew R, Stowe, David, Eldred, Timothy B, Mita, Seiji, Collazo, Ramon et al. 2020. "Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy." APL Materials, 8 (9).
Version
Final published version
Abstract
Here, we apply cathodoluminescence in scanning transmission electron microscopy to infer the influence of dislocation strain fields on the formation of point defect complexes in Si doped AlN. In addition to identifying non-radiative recombination centers, tracking Si related defect emission energies reveals a red-shift at threading dislocations. We discuss these results in the context of multiple Si-vacancy defect complexes that can form and the influence of local strain on their formation energies. By correlating the electronic and structural properties at the nanoscale, cathodoluminescence elucidates the inhomogeneity of defect complexes in Si doped AlN and offers the potential for strain engineering to control the defect energy formation landscape.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International License
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/5.0019863
